Excess carrier lifetime measurements in indium antimonide using a contactless laser technique
Identifieur interne : 000274 ( Main/Exploration ); précédent : 000273; suivant : 000275Excess carrier lifetime measurements in indium antimonide using a contactless laser technique
Auteurs : RBID : ISTEX:10854_1993_Article_BF00224742.pdfAbstract
In this paper we offer a new method and technique for the separate measuring of both excess electron and excess hole lifetimes at temperatures from 77 K to 300 K. The contactless non-destructive method is based on simultaneous irradiation of the sample by CO2-laser probe beam (λz = 10.6 Μm) and by the beam of a wavelength-tunable (5.3–6.3 Μm) CO-laser which is generating electron-hole pairs. The influence of the processing technology on charge carrier lifetimes in InSb is studied by this method.
DOI: 10.1007/BF00224742
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Churkin</name><affiliation wicri:level="1"><mods:affiliation>Technical University of Denmark, DK-280, Lyngby, Denmark</mods:affiliation><country xml:lang="fr">Danemark</country><wicri:regionArea>Technical University of Denmark, DK-280, Lyngby</wicri:regionArea><wicri:noRegion>Lyngby</wicri:noRegion></affiliation></author><author><name>V. N. Savvate'ev</name><affiliation wicri:level="1"><mods:affiliation>Weizmann Institute of Science, 76100, Rechovod, Israel</mods:affiliation><country xml:lang="fr">Israël</country><wicri:regionArea>Weizmann Institute of Science, 76100, Rechovod</wicri:regionArea><wicri:noRegion>Rechovod</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10854_1993_Article_BF00224742.pdf</idno><date when="1993">1993</date><idno type="doi">10.1007/BF00224742</idno><idno type="wicri:Area/Main/Corpus">000B41</idno><idno type="wicri:Area/Main/Curation">000B41</idno><idno type="wicri:Area/Main/Exploration">000274</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">In this paper we offer a new method and technique for the separate measuring of both excess electron and excess hole lifetimes at temperatures from 77 K to 300 K. The contactless non-destructive method is based on simultaneous irradiation of the sample by CO2-laser probe beam (λz = 10.6 Μm) and by the beam of a wavelength-tunable (5.3–6.3 Μm) CO-laser which is generating electron-hole pairs. The influence of the processing technology on charge carrier lifetimes in InSb is studied by this method.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="c7e45c467c44966d8589c6035b8db84a9473e06f"><titleInfo lang="eng"><title>Excess carrier lifetime measurements in indium antimonide using a contactless laser technique</title></titleInfo><name type="personal"><namePart type="given">A. B.</namePart><namePart type="family">Fedortsov</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>North-West Polytechnical Institute, 5, Millionnaja str., 191065, St. Petersburg, Russia</affiliation></name><name type="personal"><namePart type="given">D. G.</namePart><namePart type="family">Letenko</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>North-West Polytechnical Institute, 5, Millionnaja str., 191065, St. Petersburg, Russia</affiliation></name><name type="personal"><namePart type="given">Yu. V.</namePart><namePart type="family">Churkin</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Technical University of Denmark, DK-280, Lyngby, Denmark</affiliation></name><name type="personal"><namePart type="given">V. N.</namePart><namePart type="family">Savvate'ev</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Weizmann Institute of Science, 76100, Rechovod, Israel</affiliation></name><typeOfResource>text</typeOfResource><genre>Paper</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1991-10-01</dateCreated><dateCaptured encoding="w3cdtf">1993-01-17</dateCaptured><dateValid encoding="w3cdtf">2004-07-22</dateValid><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">In this paper we offer a new method and technique for the separate measuring of both excess electron and excess hole lifetimes at temperatures from 77 K to 300 K. The contactless non-destructive method is based on simultaneous irradiation of the sample by CO2-laser probe beam (λz = 10.6 Μm) and by the beam of a wavelength-tunable (5.3–6.3 Μm) CO-laser which is generating electron-hole pairs. The influence of the processing technology on charge carrier lifetimes in InSb is studied by this method.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci: Mater Electron</title></titleInfo><titleInfo><title>Journal of Materials Science: Materials in Electronics</title><partNumber>Year: 1993</partNumber><partNumber>Volume: 4</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1993-09-01</dateIssued><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Materials Processing, Characterization, and Design</topic><topic>Semiconductors, Materials for Electronics</topic></subject><identifier type="issn">0957-4522</identifier><identifier type="issn">Electronic: 1573-482X</identifier><identifier type="matrixNumber">10854</identifier><identifier type="local">IssueArticleCount: 11</identifier><recordInfo><recordOrigin>Chapman & Hall, 1993</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00224742</identifier><identifier type="matrixNumber">Art5</identifier><identifier type="local">BF00224742</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>203</start><end>207</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1993</recordOrigin><recordIdentifier>10854_1993_Article_BF00224742.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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